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S1DLHR3G

Taiwan Semiconductor Corporation
S1DLHR3G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
$0.00
Available to order
Reference Price (USD)
3,600+
$0.06554
Exquisite packaging
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TNT 2-6 days
EMS 3-7 days

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S1DLHR3G

S1DLHR3G

$0.00

Product details

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C

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