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RS2MAHR3G

Taiwan Semiconductor Corporation
RS2MAHR3G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1.5A DO214AC
$0.24
Available to order
Reference Price (USD)
1,800+
$0.10005
3,600+
$0.08700
5,400+
$0.07830
12,600+
$0.06960
45,000+
$0.06525
90,000+
$0.06090
Exquisite packaging
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RS2MAHR3G

RS2MAHR3G

$0.24

Product details

The RS2MAHR3G from Taiwan Semiconductor Corporation represents a breakthrough in single rectifier diode technology, offering unmatched performance in power conversion applications. This diode features an innovative design that minimizes switching losses while maximizing current handling capacity. Its precision-engineered junction provides stable characteristics under varying load conditions, ensuring reliable operation in demanding environments. The RS2MAHR3G is particularly effective in high-voltage applications such as X-ray generators and electrostatic precipitators. Industrial automation systems benefit from its fast response times and consistent performance. Other key applications include railway traction systems, mining equipment, and oil field instrumentation. The diode's rugged construction meets military-grade specifications for shock and vibration resistance. With its combination of high efficiency and durability, the RS2MAHR3G is an excellent choice for critical power electronics. Request a sample today to experience its superior performance in your application.

General specs

  • Product Status: Discontinued at Digi-Key
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

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