RS2BAHR3G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO214AC
$0.20
Available to order
Reference Price (USD)
1,800+
$0.09453
3,600+
$0.08220
5,400+
$0.07398
12,600+
$0.06576
45,000+
$0.06165
90,000+
$0.05754
Exquisite packaging
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RS2BAHR3G
$0.20
Product details
The RS2BAHR3G from Taiwan Semiconductor Corporation is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. This diode ensures reliable operation with its robust construction and advanced semiconductor technology. Ideal for both industrial and consumer electronics, the RS2BAHR3G offers excellent forward voltage characteristics and low reverse leakage current, making it a versatile choice for designers. Its compact form factor allows for easy integration into space-constrained designs. Whether you're working on power supplies, battery chargers, or signal demodulation circuits, this diode delivers consistent performance. Key features include fast switching capabilities, high surge current tolerance, and superior thermal management. Common applications include automotive systems, renewable energy inverters, and telecommunications equipment. For pricing and availability, submit an inquiry today to find the perfect solution for your project needs.
General specs
- Product Status: Discontinued at Digi-Key
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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