RS1JLHR3G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
$0.21
Available to order
Reference Price (USD)
3,600+
$0.07395
Exquisite packaging
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RS1JLHR3G
$0.21
Product details
Experience superior rectification performance with the RS1JLHR3G single diode from Taiwan Semiconductor Corporation, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The RS1JLHR3G performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the RS1JLHR3G delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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