F1T6G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A TS-1
$0.08
Available to order
Reference Price (USD)
1+
$0.07920
500+
$0.078408
1000+
$0.077616
1500+
$0.076824
2000+
$0.076032
2500+
$0.07524
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F1T6G
$0.08
Product details
Taiwan Semiconductor Corporation's F1T6G represents the next generation of single rectifier diodes, combining cutting-edge technology with practical design. This component offers superior performance in voltage regulation and power conversion tasks, with exceptional temperature stability. The diode's advanced architecture ensures fast recovery times and minimal switching losses, critical for modern electronic systems. Designers will appreciate its compatibility with automated assembly processes and consistent batch-to-batch performance. Primary applications include consumer electronics, medical devices, and power distribution systems. The F1T6G is particularly effective in battery-powered devices where energy efficiency is paramount. Its rugged design meets stringent quality standards for reliability in demanding environments. For engineers seeking a dependable rectification solution, the F1T6G delivers outstanding results. Request a quote now to incorporate this high-quality diode into your next project.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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