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BAV20W-G RHG

Taiwan Semiconductor Corporation
BAV20W-G RHG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOD123
$0.04
Available to order
Reference Price (USD)
45,000+
$0.03071
Exquisite packaging
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BAV20W-G RHG

BAV20W-G RHG

$0.04

Product details

The BAV20W-G RHG from Taiwan Semiconductor Corporation represents a breakthrough in single rectifier diode technology, offering unmatched performance in power conversion applications. This diode features an innovative design that minimizes switching losses while maximizing current handling capacity. Its precision-engineered junction provides stable characteristics under varying load conditions, ensuring reliable operation in demanding environments. The BAV20W-G RHG is particularly effective in high-voltage applications such as X-ray generators and electrostatic precipitators. Industrial automation systems benefit from its fast response times and consistent performance. Other key applications include railway traction systems, mining equipment, and oil field instrumentation. The diode's rugged construction meets military-grade specifications for shock and vibration resistance. With its combination of high efficiency and durability, the BAV20W-G RHG is an excellent choice for critical power electronics. Request a sample today to experience its superior performance in your application.

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 150 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C

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