Shopping cart

Subtotal: $0.00

1N5407G B0G

Taiwan Semiconductor Corporation
1N5407G B0G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
$0.00
Available to order
Reference Price (USD)
5,000+
$0.08064
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Taiwan Semiconductor Corporation 1N5407G B0G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
1N5407G B0G

1N5407G B0G

$0.00

Product details

Enhance your circuit designs with the 1N5407G B0G single rectifier diode by Taiwan Semiconductor Corporation, engineered for precision and durability. This diode excels in converting AC to DC with minimal power loss, ensuring energy-efficient operation across a wide range of conditions. The 1N5407G B0G features optimized junction design for improved heat dissipation and long-term reliability. Its excellent rectification efficiency makes it suitable for high-frequency applications. Typical uses include switch-mode power supplies, LED drivers, and motor control circuits. The diode's robust construction withstands harsh environmental conditions, making it ideal for automotive and industrial applications. Additional benefits include low forward voltage drop and high reverse voltage capability. Explore how the 1N5407G B0G can improve your power management solutions by contacting our sales team for more information.

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C

Viewed products

onsemi

MUR2100ERL

$0.00 (not set)
Vishay General Semiconductor - Diodes Division

IRD3901

$0.00 (not set)
Taiwan Semiconductor Corporation

LL4003G L0G

$0.00 (not set)
Taiwan Semiconductor Corporation

RS1GL RHG

$0.00 (not set)
Micro Commercial Co

FR206GP-AP

$0.00 (not set)
Vishay General Semiconductor - Diodes Division

SS15HE3_A/I

$0.00 (not set)
Taiwan Semiconductor Corporation

SS15LHM2G

$0.00 (not set)
Vishay General Semiconductor - Diodes Division

1N4937GP-M3/54

$0.00 (not set)
Vishay General Semiconductor - Diodes Division

VS-30HFUR-200

$0.00 (not set)
Taiwan Semiconductor Corporation

ES15JLWHRVG

$0.00 (not set)
Top