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ULN2065B

STMicroelectronics
ULN2065B Preview
STMicroelectronics
TRANS 4NPN DARL 80V 1.75A 16DIP
$6.80
Available to order
Reference Price (USD)
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$2.81000
25+
$2.37880
100+
$2.02670
500+
$1.66512
1,000+
$1.37968
Exquisite packaging
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ULN2065B

ULN2065B

$6.80

Product details

STMicroelectronics's ULN2065B represents the pinnacle of Bipolar Junction Transistor (BJT) Array technology within Discrete Semiconductor Products. This innovative solution combines multiple transistors in a single package, optimized for synchronized operation. The ULN2065B delivers exceptional current handling capacity with minimal voltage drop across junctions. Its symmetrical design ensures identical performance characteristics for all included transistors. The product features enhanced electrostatic discharge protection for improved reliability. With its wide operating temperature range, it performs consistently in diverse environments. The ULN2065B is particularly valuable for applications requiring matched transistor pairs or groups. Its low saturation voltage contributes to energy-efficient circuit designs. This BJT Array demonstrates excellent frequency response for high-speed applications. Common applications include precision voltage regulators in power supply units. Audio processing equipment benefits from its low distortion characteristics. Test and measurement instruments utilize its stable parameters for accurate readings. The ULN2065B also serves critical functions in aerospace electronics systems. STMicroelectronics has engineered this product to meet rigorous industry standards for quality and performance. Its lead-free construction complies with modern environmental regulations. For engineers seeking reliable, high-performance transistor arrays, the ULN2065B offers an optimal solution. Visit our website to submit your inquiry about this versatile semiconductor component today.

General specs

  • Product Status: Active
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)

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