STW26N65DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 20A TO247
$2.20
Available to order
Reference Price (USD)
1+
$2.20288
500+
$2.1808512
1000+
$2.1588224
1500+
$2.1367936
2000+
$2.1147648
2500+
$2.092736
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STW26N65DM2
$2.20
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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