STPSC10065G2-TR
STMicroelectronics
STMicroelectronics
650 V POWER SCHOTTKY SILICON CAR
$3.83
Available to order
Reference Price (USD)
1+
$3.83000
500+
$3.7917
1000+
$3.7534
1500+
$3.7151
2000+
$3.6768
2500+
$3.6385
Exquisite packaging
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STPSC10065G2-TR
$3.83
Product details
The STPSC10065G2-TR from STMicroelectronics represents a breakthrough in single rectifier diode technology, offering unmatched performance in power conversion applications. This diode features an innovative design that minimizes switching losses while maximizing current handling capacity. Its precision-engineered junction provides stable characteristics under varying load conditions, ensuring reliable operation in demanding environments. The STPSC10065G2-TR is particularly effective in high-voltage applications such as X-ray generators and electrostatic precipitators. Industrial automation systems benefit from its fast response times and consistent performance. Other key applications include railway traction systems, mining equipment, and oil field instrumentation. The diode's rugged construction meets military-grade specifications for shock and vibration resistance. With its combination of high efficiency and durability, the STPSC10065G2-TR is an excellent choice for critical power electronics. Request a sample today to experience its superior performance in your application.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 130 µA @ 650 V
- Capacitance @ Vr, F: 670pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
- Operating Temperature - Junction: -40°C ~ 175°C
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