STP11N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 9A TO220
$2.17
Available to order
Reference Price (USD)
1+
$2.63000
50+
$2.14640
100+
$1.94550
500+
$1.54396
1,000+
$1.30305
2,500+
$1.22275
5,000+
$1.18260
Exquisite packaging
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STP11N65M5
$2.17
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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