STO65N60DM6
STMicroelectronics
STMicroelectronics
N-CHANNEL 600 V, 67 MOHM TYP., 4
$7.29
Available to order
Reference Price (USD)
1+
$7.29000
500+
$7.2171
1000+
$7.1442
1500+
$7.0713
2000+
$6.9984
2500+
$6.9255
Exquisite packaging
Discount
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| EMS | 3-7 days |
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STO65N60DM6
$7.29
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65.2 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL (HV)
- Package / Case: 8-PowerSFN
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