STL3N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 2.3A POWERFLAT
$1.10
Available to order
Reference Price (USD)
3,000+
$0.40040
6,000+
$0.38038
15,000+
$0.36608
Exquisite packaging
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STL3N65M2
$1.10
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 22W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (3.3x3.3)
- Package / Case: 8-PowerVDFN
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