STH3N150-2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 1500V 2.5A H2PAK
$5.95
Available to order
Reference Price (USD)
1,000+
$2.78357
2,000+
$2.65968
Exquisite packaging
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STH3N150-2
$5.95
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H²PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
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