STH200N10WF7-2
STMicroelectronics
STMicroelectronics
N-CHANNEL 100 V, 4.8 MOHM TYP.,
$7.24
Available to order
Reference Price (USD)
1+
$7.24000
500+
$7.1676
1000+
$7.0952
1500+
$7.0228
2000+
$6.9504
2500+
$6.878
Exquisite packaging
Discount
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STH200N10WF7-2
$7.24
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 340W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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