STH10N80K5-2AG
STMicroelectronics
STMicroelectronics
MOSFET N-CH 800V 8A H2PAK-2
$4.62
Available to order
Reference Price (USD)
1+
$4.62000
500+
$4.5738
1000+
$4.5276
1500+
$4.4814
2000+
$4.4352
2500+
$4.389
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STH10N80K5-2AG
$4.62
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 121W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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