STGWA40HP65FB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 4
$4.19
Available to order
Reference Price (USD)
1+
$4.19000
500+
$4.1481
1000+
$4.1062
1500+
$4.0643
2000+
$4.0224
2500+
$3.9805
Exquisite packaging
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STGWA40HP65FB2
$4.19
Product details
The STGWA40HP65FB2 from STMicroelectronics is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the STGWA40HP65FB2 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the STGWA40HP65FB2 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 72 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 227 W
- Switching Energy: 410µJ (off)
- Input Type: Standard
- Gate Charge: 153 nC
- Td (on/off) @ 25°C: -/125ns
- Test Condition: 400V, 40A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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