STGW80H65DFB-4
STMicroelectronics
STMicroelectronics
IGBT BIPO 650V 80A TO247
$5.72
Available to order
Reference Price (USD)
600+
$9.93250
Exquisite packaging
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STGW80H65DFB-4
$5.72
Product details
The STGW80H65DFB-4 from STMicroelectronics is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the STGW80H65DFB-4 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the STGW80H65DFB-4 for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 2.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 414 nC
- Td (on/off) @ 25°C: 84ns/280ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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