STGW75H65DFB2-4
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 7
$6.72
Available to order
Reference Price (USD)
1+
$6.72000
500+
$6.6528
1000+
$6.5856
1500+
$6.5184
2000+
$6.4512
2500+
$6.384
Exquisite packaging
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STGW75H65DFB2-4
$6.72
Product details
Optimize your power electronics with the STGW75H65DFB2-4 single IGBT transistor from STMicroelectronics. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The STGW75H65DFB2-4 is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the STGW75H65DFB2-4 can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 115 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 357 W
- Switching Energy: 992µJ (on), 766µJ (off)
- Input Type: Standard
- Gate Charge: 207 nC
- Td (on/off) @ 25°C: 22ns/121ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 88 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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