STGW25H120F2
STMicroelectronics
STMicroelectronics
IGBT H-SERIES 1200V 25A TO-247
$7.78
Available to order
Reference Price (USD)
1+
$8.88000
30+
$7.73033
120+
$6.79467
510+
$5.99775
1,020+
$5.30475
Exquisite packaging
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STGW25H120F2
$7.78
Product details
Maximize power efficiency with the STGW25H120F2 single IGBT transistor by STMicroelectronics. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The STGW25H120F2 features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the STGW25H120F2 delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
- Power - Max: 375 W
- Switching Energy: 600µJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 29ns/130ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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