STGB6M65DF2
STMicroelectronics
STMicroelectronics
IGBT TRENCH 650V 12A D2PAK
$0.83
Available to order
Reference Price (USD)
2,000+
$0.66400
Exquisite packaging
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STGB6M65DF2
$0.83
Product details
Enhance your power control systems with the STGB6M65DF2 single IGBT transistor from STMicroelectronics. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The STGB6M65DF2 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the STGB6M65DF2 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 88 W
- Switching Energy: 36µJ (on), 200µJ (off)
- Input Type: Standard
- Gate Charge: 21.2 nC
- Td (on/off) @ 25°C: 15ns/90ns
- Test Condition: 400V, 6A, 22Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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