STD3NK100Z
STMicroelectronics
STMicroelectronics
MOSFET N-CH 1000V 2.5A DPAK
$2.58
Available to order
Reference Price (USD)
2,500+
$1.70094
5,000+
$1.64434
Exquisite packaging
Discount
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STD3NK100Z
$2.58
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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