Shopping cart

Subtotal: $0.00

STD1NK60-1

STMicroelectronics
STD1NK60-1 Preview
STMicroelectronics
MOSFET N-CH 600V 1A IPAK
$1.16
Available to order
Reference Price (USD)
1+
$1.01000
75+
$0.81000
150+
$0.70880
525+
$0.54968
1,050+
$0.43395
2,550+
$0.40502
5,025+
$0.38477
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

STMicroelectronics STD1NK60-1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
STD1NK60-1

STD1NK60-1

$1.16

Product details

STMicroelectronics presents the STD1NK60-1, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The STD1NK60-1 offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The STD1NK60-1 also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Viewed products

STMicroelectronics

STP25N80K5

$0.00 (not set)
Microchip Technology

APT20M18LVRG

$0.00 (not set)
Taiwan Semiconductor Corporation

TSM056NH04CR RLG

$0.00 (not set)
Vishay Siliconix

SQJA16EP-T1_GE3

$0.00 (not set)
Infineon Technologies

IAUC100N04S6L025ATMA1

$0.00 (not set)
STMicroelectronics

STB160N75F3

$0.00 (not set)
Rohm Semiconductor

R6024KNX

$0.00 (not set)
onsemi

NTD4906N-35H

$0.00 (not set)
IXYS

IXTP50N20PM

$0.00 (not set)
STMicroelectronics

STP6N80K5

$0.00 (not set)
Top