STD10N60DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 8A DPAK
$1.66
Available to order
Reference Price (USD)
2,500+
$0.75082
5,000+
$0.71740
12,500+
$0.69353
Exquisite packaging
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STD10N60DM2
$1.66
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 109W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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