Shopping cart

Subtotal: $0.00

STBV32-AP

STMicroelectronics
STBV32-AP Preview
STMicroelectronics
TRANS NPN 400V 1.5A TO92AP
$0.41
Available to order
Reference Price (USD)
2,000+
$0.09984
6,000+
$0.09480
10,000+
$0.08724
50,000+
$0.07632
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

STMicroelectronics STBV32-AP is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
STBV32-AP

STBV32-AP

$0.41

Product details

The STBV32-AP by STMicroelectronics sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The STBV32-AP commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. STMicroelectronics's commitment to innovation is evident in the STBV32-AP's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.

General specs

  • Product Status: Obsolete
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92AP

Viewed products

Diotec Semiconductor

BCX56-16

$0.00 (not set)
Toshiba Semiconductor and Storage

2SA1362-GR,LF

$0.00 (not set)
Microchip Technology

2N6058

$0.00 (not set)
NTE Electronics, Inc

TIP36B

$0.00 (not set)
Microchip Technology

JANTXV2N3418

$0.00 (not set)
Diodes Incorporated

ZTX869STZ

$0.00 (not set)
onsemi

BC33825TA

$0.00 (not set)
onsemi

2SA2210-EPN-1E

$0.00 (not set)
onsemi

TIP120TU

$0.00 (not set)
onsemi

2SD613E

$0.00 (not set)
Top