STB35N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 27A D2PAK
$7.64
Available to order
Reference Price (USD)
1,000+
$4.66290
2,000+
$4.49020
Exquisite packaging
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STB35N65M5
$7.64
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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