Shopping cart

Subtotal: $0.00

STB34NM60ND

STMicroelectronics
STB34NM60ND Preview
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
$11.90
Available to order
Reference Price (USD)
1,000+
$5.27175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

STMicroelectronics STB34NM60ND is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
STB34NM60ND

STB34NM60ND

$11.90

Product details

STMicroelectronics's STB34NM60ND stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The STB34NM60ND demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The STB34NM60ND also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Viewed products

Vishay Siliconix

SISS50DN-T1-GE3

$0.00 (not set)
Infineon Technologies

IRFB7734PBF

$0.00 (not set)
Nexperia USA Inc.

NX3008NBKMB,315

$0.00 (not set)
Vishay Siliconix

IRF710STRLPBF

$0.00 (not set)
Texas Instruments

CSD25501F3

$0.00 (not set)
onsemi

NTMFS4H01NT1G

$0.00 (not set)
onsemi

FDMC013P030Z

$0.00 (not set)
Vishay Siliconix

SI4401FDY-T1-GE3

$0.00 (not set)
Vishay Siliconix

IRFPC50PBF

$0.00 (not set)
Fairchild Semiconductor

FQB8N25TM

$0.00 (not set)
Top