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STB18NM60ND

STMicroelectronics
STB18NM60ND Preview
STMicroelectronics
MOSFET N-CH 600V 13A D2PAK
$5.80
Available to order
Reference Price (USD)
1,000+
$3.44270
2,000+
$3.28947
Exquisite packaging
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STB18NM60ND

STB18NM60ND

$5.80

Product details

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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