Shopping cart

Subtotal: $0.00

STB11NM60T4

STMicroelectronics
STB11NM60T4 Preview
STMicroelectronics
MOSFET N-CH 650V 11A D2PAK
$4.63
Available to order
Reference Price (USD)
1,000+
$2.02202
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

STMicroelectronics STB11NM60T4 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
STB11NM60T4

STB11NM60T4

$4.63

Product details

The STB11NM60T4 from STMicroelectronics is a technologically advanced single MOSFET transistor belonging to the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - Single). This component sets new standards in power switching efficiency, offering designers a perfect balance between performance and reliability. Engineered with precision, the STB11NM60T4 demonstrates outstanding characteristics including fast switching capability, low power dissipation, and excellent thermal stability. These features make it particularly suitable for high-frequency applications and power-sensitive designs. The MOSFET finds extensive use in electric vehicle components, industrial welding equipment, and advanced power supply units. It's equally effective in consumer electronics such as high-efficiency LED drivers, smart appliances, and portable electronic devices. For infrastructure applications, the STB11NM60T4 proves invaluable in telecom power systems, base station equipment, and railway electronics. Its rugged design ensures consistent performance even in challenging operating conditions. Design engineers will appreciate the component's versatility and the design flexibility it offers across multiple voltage and current ranges. To learn more about how the STB11NM60T4 can enhance your specific application, we invite you to submit an online inquiry. Our technical sales team stands ready to provide detailed product information and purchasing options tailored to your project needs.

General specs

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Viewed products

Infineon Technologies

IPD65R420CFDATMA1

$0.00 (not set)
Infineon Technologies

IAUC60N04S6N044ATMA1

$0.00 (not set)
Vishay Siliconix

SI1012CR-T1-GE3

$0.00 (not set)
Fairchild Semiconductor

HUF75542S3S

$0.00 (not set)
STMicroelectronics

STP4N80K5

$0.00 (not set)
Microchip Technology

MSC750SMA170S

$0.00 (not set)
Infineon Technologies

IPP65R095C7XKSA1

$0.00 (not set)
Rectron USA

RM47N600T7

$0.00 (not set)
Rohm Semiconductor

R6011ENX

$0.00 (not set)
Infineon Technologies

IRFH5301TRPBF

$0.00 (not set)
Top