SCTW90N65G2V
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 90A HIP247
$38.02
Available to order
Reference Price (USD)
1+
$38.02000
500+
$37.6398
1000+
$37.2596
1500+
$36.8794
2000+
$36.4992
2500+
$36.119
Exquisite packaging
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SCTW90N65G2V
$38.02
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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