SCTW40N120G2V
STMicroelectronics
STMicroelectronics
SILICON CARBIDE POWER MOSFET 120
$22.64
Available to order
Reference Price (USD)
1+
$22.64000
500+
$22.4136
1000+
$22.1872
1500+
$21.9608
2000+
$21.7344
2500+
$21.508
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
STMicroelectronics SCTW40N120G2V is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SCTW40N120G2V
$22.64
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 4.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
Viewed products