SCTW35N65G2V
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 45A HIP247
$19.57
Available to order
Reference Price (USD)
1+
$19.57000
500+
$19.3743
1000+
$19.1786
1500+
$18.9829
2000+
$18.7872
2500+
$18.5915
Exquisite packaging
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SCTW35N65G2V
$19.57
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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