SCTH35N65G2V-7
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 45A H2PAK-7
$16.77
Available to order
Reference Price (USD)
1+
$16.77000
500+
$16.6023
1000+
$16.4346
1500+
$16.2669
2000+
$16.0992
2500+
$15.9315
Exquisite packaging
Discount
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SCTH35N65G2V-7
$16.77
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
