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SCT30N120

STMicroelectronics
SCT30N120 Preview
STMicroelectronics
SICFET N-CH 1200V 40A HIP247
$25.69
Available to order
Reference Price (USD)
1+
$32.15000
30+
$28.63400
120+
$25.88183
Exquisite packaging
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SCT30N120

SCT30N120

$25.69

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
  • Vgs (Max): +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3

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