2N3500
Solid State Inc.
Solid State Inc.
SILICON TRANSISTOR NPN TO-39
$0.87
Available to order
Reference Price (USD)
1+
$10.89000
10+
$9.80400
25+
$8.93280
100+
$8.06140
250+
$7.40776
500+
$6.75412
1,000+
$5.88263
Exquisite packaging
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2N3500
$0.87
Product details
Solid State Inc.'s 2N3500 represents the next evolution in RF BJT transistors, combining cutting-edge semiconductor technology with practical design features. This discrete semiconductor product excels in high-frequency switching and amplification tasks, featuring optimized junction characteristics for superior current handling. The transistor's innovative architecture reduces parasitic capacitance while maintaining excellent power gain across its operational bandwidth. Key advantages include a wide dynamic range for variable input signals, improved thermal dissipation properties, and consistent batch-to-batch performance reliability. Designed for mission-critical applications, it performs exceptionally in 5G network infrastructure components and microwave relay systems. Broadcast engineers utilize its clean signal reproduction in FM/HD radio transmitters and television broadcasting equipment. In the transportation sector, it enables reliable communication in railway signaling and aviation navigation systems. The 2N3500 also supports emerging technologies like quantum computing research equipment and RFID tracking systems. Its lead-free construction complies with global environmental standards without sacrificing performance. For system designers seeking a balance between RF precision and power efficiency, this transistor delivers outstanding results. Solid State Inc. provides comprehensive technical documentation and application notes to simplify your design process. Take the next step in your RF project complete our online inquiry form to receive personalized pricing and delivery options for the 2N3500.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 150V
- Frequency - Transition: 150MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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