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SM662GEB BESS

Silicon Motion, Inc.
SM662GEB BESS Preview
Silicon Motion, Inc.
FERRI EMMC 10GB BICS4 3D TLC + E
$17.85
Available to order
Reference Price (USD)
1+
$17.85000
500+
$17.6715
1000+
$17.493
1500+
$17.3145
2000+
$17.136
2500+
$16.9575
Exquisite packaging
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Silicon Motion, Inc. SM662GEB BESS is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SM662GEB BESS

SM662GEB BESS

$17.85

Product details

Discover the SM662GEB BESS by Silicon Motion, Inc., a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The SM662GEB BESS features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The SM662GEB BESS is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Silicon Motion, Inc. memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the SM662GEB BESS, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: -
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-BGA (14x18)

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