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BFL4007

Sanyo
BFL4007 Preview
Sanyo
MOSFET N-CH 600V 14/8.7A TO220FI
$2.81
Available to order
Reference Price (USD)
1+
$2.81000
500+
$2.7819
1000+
$2.7538
1500+
$2.7257
2000+
$2.6976
2500+
$2.6695
Exquisite packaging
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BFL4007

BFL4007

$2.81

Product details

The BFL4007 single MOSFET transistor from Sanyo represents excellence in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the evolving demands of modern power electronics, offering superior switching performance and reliability. Key features of the BFL4007 include optimized gate drive characteristics, low conduction resistance, and excellent thermal properties. These attributes contribute to reduced power losses and improved system efficiency in various applications. The MOSFET performs exceptionally in agricultural automation systems, construction equipment electronics, and marine power systems. For consumer applications, it's ideal for high-performance kitchen appliances, personal care devices, and home entertainment systems. The component also excels in security system power management and emergency lighting applications. With its robust design and electrical efficiency, the BFL4007 provides design engineers with a reliable solution for diverse power control needs. Whether you're developing new products or upgrading existing systems, this MOSFET offers the performance and durability you require. Ready to explore how the BFL4007 can enhance your designs? Submit your inquiry through our online portal to receive prompt assistance from our technical sales team, including detailed specifications and competitive pricing information.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 8.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 40W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack

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