STA457C
Sanken
Sanken
TRANS 2NPN/2PNP DARL 60V 10SIP
$2.36
Available to order
Reference Price (USD)
1+
$3.38000
10+
$3.01900
25+
$2.71680
100+
$2.47540
250+
$2.23388
500+
$2.00446
1,000+
$1.69050
2,500+
$1.61000
Exquisite packaging
Discount
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STA457C
$2.36
Product details
Introducing the STA457C BJT Array by Sanken, a premium offering in Discrete Semiconductor Products. This sophisticated transistor array combines multiple bipolar junction transistors with closely matched parameters. The STA457C excels in applications demanding coordinated switching or amplification across several channels. Its design emphasizes thermal stability and parameter uniformity throughout the array. The product delivers high current gain with minimal variation between individual transistors. With its compact footprint, it enables high-density circuit designs without performance compromise. The STA457C features low noise operation for sensitive signal processing applications. Its robust construction withstands mechanical stress and environmental factors. This BJT Array demonstrates excellent long-term parameter stability for reliable system operation. Power supply designers value its consistent performance in voltage regulation circuits. Audio engineers utilize it for balanced amplification stages in professional equipment. Automotive electronics benefit from its durability in challenging operating conditions. The STA457C also serves critical functions in industrial control systems. Sanken has implemented rigorous quality control measures throughout production. The component's design facilitates heat dissipation in high-power applications. Its lead-free composition meets modern environmental standards. For design engineers seeking reliable, high-performance transistor arrays, the STA457C delivers exceptional value. Explore its capabilities further by submitting an inquiry through our online portal today.
General specs
- Product Status: Active
- Transistor Type: 2 NPN, 2 PNP Darlington (H-Bridge)
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 4V
- Power - Max: 4W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 10-SIP
- Supplier Device Package: 10-SIP
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