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STA431A

Sanken
STA431A Preview
Sanken
TRANS 2NPN/2PNP 60V 3A 10SIP
$0.00
Available to order
Reference Price (USD)
1+
$3.23000
10+
$2.88800
25+
$2.59880
100+
$2.36780
250+
$2.13676
500+
$1.91730
1,000+
$1.61700
2,500+
$1.54000
Exquisite packaging
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Sanken STA431A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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STA431A

STA431A

$0.00

Product details

Enhance your electronic designs with the STA431A BJT Array from Sanken, a top-tier solution in the Discrete Semiconductor Products range. This transistor array is engineered for applications requiring multiple bipolar transistors with matched characteristics. The STA431A excels in providing uniform performance across all transistors, ensuring balanced operation in complex circuits. Its low leakage current and high gain make it ideal for precision tasks. The product's design focuses on minimizing power consumption while maximizing output efficiency. With superior thermal management, it operates reliably under continuous load. The STA431A is perfect for creating compact, high-density circuit layouts. Engineers appreciate its consistent parameters across production batches for design stability. This BJT Array finds applications in medical instrumentation for accurate signal processing. Telecommunications equipment utilizes its fast switching for clear signal transmission. Renewable energy systems employ it for efficient power conversion processes. For robotics and automation, it offers precise control over motor functions. The STA431A stands as a testament to Sanken's commitment to quality semiconductor solutions. Its compatibility with surface-mount technology simplifies assembly processes. Choose this reliable component for projects demanding high performance and durability. Contact us through our online portal to request a quote for the STA431A and elevate your electronic designs.

General specs

  • Product Status: Obsolete
  • Transistor Type: 2 NPN, 2 PNP (H-Bridge)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
  • Power - Max: 4W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP

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