STA412A
Sanken
Sanken
TRANS 4NPN 60V 3A 10-SIP
$3.12
Available to order
Reference Price (USD)
1+
$2.94000
10+
$2.62500
25+
$2.36240
100+
$2.15250
250+
$1.94252
500+
$1.74300
1,000+
$1.47000
2,500+
$1.40000
Exquisite packaging
Discount
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| EMS | 3-7 days |
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STA412A
$3.12
Product details
Sanken's STA412A stands as a superior choice in Bipolar Junction Transistor (BJT) Arrays within Discrete Semiconductor Products. This high-performance component combines multiple transistors with tightly controlled parameters in a single package. The STA412A delivers exceptional current amplification with minimal variation between elements. Its design focuses on thermal equilibrium across all transistors for uniform performance. The product features low leakage currents and high breakdown voltage ratings. With its space-efficient packaging, it enables compact circuit designs without sacrificing capability. The STA412A demonstrates excellent switching characteristics for both analog and digital applications. Its robust construction ensures reliability in challenging operating environments. Precision instrumentation benefits from its stable amplification characteristics. Motor drive circuits utilize its synchronized switching capabilities. Power conversion systems employ it for efficient energy management. The STA412A also finds application in sophisticated control systems. Sanken has implemented advanced quality assurance protocols in its manufacturing. The component's design facilitates effective heat dissipation in high-power scenarios. Its RoHS-compliant construction meets contemporary environmental standards. For engineers requiring reliable, high-performance transistor arrays, the STA412A offers an excellent solution. Contact us today through our online platform to inquire about pricing and delivery options.
General specs
- Product Status: Active
- Transistor Type: 4 NPN (Quad)
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 1A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 4V
- Power - Max: 4W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 10-SIP
- Supplier Device Package: 10-SIP
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