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VT6Z2T2R

Rohm Semiconductor
VT6Z2T2R Preview
Rohm Semiconductor
TRANS NPN/PNP 50V 0.1A 6VMT
$0.00
Available to order
Reference Price (USD)
8,000+
$0.08364
Exquisite packaging
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VT6Z2T2R

VT6Z2T2R

$0.00

Product details

Rohm Semiconductor's VT6Z2T2R represents a high-performance solution in Bipolar Junction Transistor (BJT) Arrays for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a compact package. The VT6Z2T2R delivers excellent current handling capacity with uniform performance across all elements. Its design emphasizes thermal stability and parameter consistency. The product features low noise operation for sensitive signal processing applications. With its high current gain, it ensures efficient circuit operation. The VT6Z2T2R demonstrates reliable switching characteristics for diverse electronic systems. Medical diagnostic equipment benefits from its precise signal amplification. Consumer electronics utilize its space-saving design for compact devices. Industrial control systems employ its robust performance in harsh environments. The VT6Z2T2R also serves critical functions in power distribution systems. Rohm Semiconductor has implemented stringent quality control measures in production. The component's design facilitates optimal thermal management during operation. Its lead-free composition complies with global environmental regulations. Engineers value its consistent performance in both prototype and mass production scenarios. The VT6Z2T2R offers a reliable solution for demanding electronic applications. Its versatility makes it suitable for various circuit design requirements. Contact us today through our online portal to inquire about pricing and availability for your projects.

General specs

  • Product Status: Active
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 350MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD
  • Supplier Device Package: VMT6

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