UMZ1NTR
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP 50V 0.15A 6UMT
$0.46
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3,000+
$0.06760
6,000+
$0.06084
15,000+
$0.05408
30,000+
$0.05070
75,000+
$0.04732
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UMZ1NTR
$0.46
Product details
Rohm Semiconductor's UMZ1NTR stands as a superior choice in Bipolar Junction Transistor (BJT) Arrays within Discrete Semiconductor Products. This high-performance component combines multiple transistors with tightly controlled parameters in a single package. The UMZ1NTR delivers exceptional current amplification with minimal variation between elements. Its design focuses on thermal equilibrium across all transistors for uniform performance. The product features low leakage currents and high breakdown voltage ratings. With its space-efficient packaging, it enables compact circuit designs without sacrificing capability. The UMZ1NTR demonstrates excellent switching characteristics for both analog and digital applications. Its robust construction ensures reliability in challenging operating environments. Precision instrumentation benefits from its stable amplification characteristics. Motor drive circuits utilize its synchronized switching capabilities. Power conversion systems employ it for efficient energy management. The UMZ1NTR also finds application in sophisticated control systems. Rohm Semiconductor has implemented advanced quality assurance protocols in its manufacturing. The component's design facilitates effective heat dissipation in high-power scenarios. Its RoHS-compliant construction meets contemporary environmental standards. For engineers requiring reliable, high-performance transistor arrays, the UMZ1NTR offers an excellent solution. Contact us today through our online platform to inquire about pricing and delivery options.
General specs
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 180MHz, 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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