UMH11NTN
Rohm Semiconductor
Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W UMT6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.08640
6,000+
$0.08160
15,000+
$0.07440
30,000+
$0.06960
75,000+
$0.06720
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UMH11NTN
$0.48
Product details
The UMH11NTN by Rohm Semiconductor is a state-of-the-art pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products line under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is crafted to meet the demands of advanced electronic applications, offering high efficiency and dependability. The UMH11NTN features integrated pre-biasing, which optimizes circuit design and reduces component count. Its superior thermal performance ensures reliable operation in varying conditions. This BJT array is perfect for applications like motor drives, LED lighting, and power management. The UMH11NTN is also widely used in renewable energy solutions, industrial controls, and communication devices. With its high gain and low saturation voltage, it is ideal for precision applications. The compact and rugged design of the UMH11NTN makes it suitable for both commercial and industrial use. Engineers seeking a high-performance transistor array will find the UMH11NTN to be an excellent solution. Submit your inquiry today to receive detailed information on pricing and availability tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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