UMD6NTR
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.15W UMT6
$0.45
Available to order
Reference Price (USD)
3,000+
$0.08100
6,000+
$0.07650
15,000+
$0.06975
30,000+
$0.06525
75,000+
$0.06300
Exquisite packaging
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UMD6NTR
$0.45
Product details
The UMD6NTR by Rohm Semiconductor is a state-of-the-art pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products line under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is crafted to meet the demands of advanced electronic applications, offering high efficiency and dependability. The UMD6NTR features integrated pre-biasing, which optimizes circuit design and reduces component count. Its superior thermal performance ensures reliable operation in varying conditions. This BJT array is perfect for applications like motor drives, LED lighting, and power management. The UMD6NTR is also widely used in renewable energy solutions, industrial controls, and communication devices. With its high gain and low saturation voltage, it is ideal for precision applications. The compact and rugged design of the UMD6NTR makes it suitable for both commercial and industrial use. Engineers seeking a high-performance transistor array will find the UMD6NTR to be an excellent solution. Submit your inquiry today to receive detailed information on pricing and availability tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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