UMB3NFHATN
Rohm Semiconductor
Rohm Semiconductor
PNP+PNP DIGITAL TRANSISTOR (WITH
$0.34
Available to order
Reference Price (USD)
3,000+
$0.05980
Exquisite packaging
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UMB3NFHATN
$0.34
Product details
Rohm Semiconductor's UMB3NFHATN represents the pinnacle of Bipolar Junction Transistor (BJT) Array technology within Discrete Semiconductor Products. This innovative solution combines multiple transistors in a single package, optimized for synchronized operation. The UMB3NFHATN delivers exceptional current handling capacity with minimal voltage drop across junctions. Its symmetrical design ensures identical performance characteristics for all included transistors. The product features enhanced electrostatic discharge protection for improved reliability. With its wide operating temperature range, it performs consistently in diverse environments. The UMB3NFHATN is particularly valuable for applications requiring matched transistor pairs or groups. Its low saturation voltage contributes to energy-efficient circuit designs. This BJT Array demonstrates excellent frequency response for high-speed applications. Common applications include precision voltage regulators in power supply units. Audio processing equipment benefits from its low distortion characteristics. Test and measurement instruments utilize its stable parameters for accurate readings. The UMB3NFHATN also serves critical functions in aerospace electronics systems. Rohm Semiconductor has engineered this product to meet rigorous industry standards for quality and performance. Its lead-free construction complies with modern environmental regulations. For engineers seeking reliable, high-performance transistor arrays, the UMB3NFHATN offers an optimal solution. Visit our website to submit your inquiry about this versatile semiconductor component today.
General specs
- Product Status: Active
- Transistor Type: 2 PNP Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 150mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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