SH8M13GZETB
Rohm Semiconductor
Rohm Semiconductor
MIDDLE POWER MOSFET SERIES (DUAL
$0.00
Available to order
Reference Price (USD)
2,500+
$0.38360
Exquisite packaging
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| EMS | 3-7 days |
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SH8M13GZETB
$0.00
Product details
General specs
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 7A
- Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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