SCT4026DEHRC11
Rohm Semiconductor
Rohm Semiconductor
750V, 56A, 3-PIN THD, TRENCH-STR
$23.84
Available to order
Reference Price (USD)
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$23.84000
500+
$23.6016
1000+
$23.3632
1500+
$23.1248
2000+
$22.8864
2500+
$22.648
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SCT4026DEHRC11
$23.84
Product details
The SCT4026DEHRC11 from Rohm Semiconductor is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the SCT4026DEHRC11 provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The SCT4026DEHRC11 finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the SCT4026DEHRC11 and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
- Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
- Vgs (Max): +21V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 176W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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