SCT3160KLHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 17A TO247N
$16.56
Available to order
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$12.54000
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$11.52700
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$11.04880
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$9.73500
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$9.25722
900+
$8.65998
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SCT3160KLHRC11
$16.56
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 103W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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