SCT3120ALGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 21A TO247N
$9.58
Available to order
Reference Price (USD)
1+
$7.26000
10+
$6.55800
30+
$6.25267
120+
$5.42900
270+
$5.18500
510+
$4.72751
1,020+
$4.27000
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SCT3120ALGC11
$9.58
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 103W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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