SCT3105KLHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 24A TO247N
$22.95
Available to order
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$18.91000
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$17.38200
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$16.66120
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$14.67980
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$13.95931
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SCT3105KLHRC11
$22.95
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 134W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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